A Reliable Optimisation-based Model Parameter Extraction

Approach for GaAS-based Field-Effect Transistors using Measurement-correlated Parameter Starting Values

Mwema, Wilfred

kassel university press, ISBN: 978-3-933146-94-6, 2002, XXIV, 162 Pages

URN: urn:nbn:de:0002-947

Zugl.: Kassel, Univ., Diss. 2002

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Content: The rapid growth in the demand of communication chanel allocation has led to these allocation at an ever increasing frequency. This development coupled with an increasing desire to shorten the design/market cycle times with an increased system reliability has led to a rapidly increasing importance of computer-aided-design for monolithic microwave integrated circuits. Since integration eliminates the possibility for circuit post-tuning, reproducible and reliable technologies as well as design methodologies are essential components of low-cost circuit realisations. A prerequisite requirement for achieving these goals is a fast, accurate and reliable modelling approach for the non-linear circuit elements such as MESFETs, HEMTs, pHEMTs and HBT.

This thesis addresses the problem of reliable and physically relevant equivalent circuit model parameter extraction valid for microwave and millimeter wave group III-V field effect transistors. A new and reliable technique for the generation of measurement-correlated starting values for an optimisatio-based parameter extraction approach is presented and shown to be superior, in terms of computation time, to the commonly employed optimisation approach using random starting values. The reliability and the physical relevancy of extracted parameter values are demonstrated on the basis of several gallium arsenide-based low-power field effect transistors for microwave and millimeter wave applications.

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