Large-Signal Modeling of GaN Device for High Power Amplifier Design

Jarndal, Anwar Hasan

kassel university press, ISBN: 978-3-89958-258-1, 2007, 133 Pages

URN: urn:nbn:de:0002-2583

Zugl.: Kassel, Univ., Diss. 2006

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Content: Next generation wireless communication systems are planned to offer new ways of access information and services with higher data speed and data bandwidth. For these systems, microwave device is adopted to produce high RF power levels at high frequency and to operate at high temperature for designing the front-end high power amplifier (HPA). In addition to the high RF output power, power added efficiency (PAE) and linearity should be optimized to meet the requirements of the high capacity and high quality services of these systems. AlGaN/GaN HEMT device is becoming an interesting candidate for the HPA design, which requires an accurate large-signal model for this device. In this Dissertation, a table-based large-signal model for AlGaN/GaN HEMT accounting for trapping and self-heating induced current dispersion is presented. The model elements construction is optimized in terms of the device nonlinearity prediction. The model implementation is taken into account the dynamic behavior of the trapping and self-heating phenomena. The model validity is verified through simulated and measured outputs of the device under pulsed and continuous large-signal excitations for 1-mm gate width devices. Single- and two-tone simulation results show that the model can efficiently predict the output power and its harmonics and the associated intermodulation distortion under different input power and bias conditions.

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